PART |
Description |
Maker |
STSR30D STSR30D-TR STSR30 |
From old datasheet system SYNCHRONOUS RECTIFIER SMART DRIVER FOR FLYBACK SYNCHRONOUS RECTIFIERS DRIVER FOR ADAPTOR FLYBACK CONVERTER
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
LTC3806 LTC3806EDE |
Synchronous Flyback DC/DC Controller
|
Linear Technology
|
STSR3CD-TR |
SYNCHRONOUS RECTIFIERS SMART DRIVER FOR FLYBACK
|
ST Microelectronics
|
LTC4268CDKD-1 LTC4268CDKD-1-PBF LTC4268CDKD-1-TR L |
High Power PD with Synchronous NoOpto Flyback Controller
|
Linear Technology
|
FAN6240 |
Secondary-Side Synchronous Rectifier Controller Flyback Converters
|
ON Semiconductor
|
19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL .187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL .187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL .187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL 190030058 2 mm2, PUSH-ON TERMINAL .205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL 190030060 2 mm2, PUSH-ON TERMINAL .187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL .250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
|
Molex, Inc. TE Connectivity, Ltd. MOLEX INC
|
IRFY430M-T257 |
Publications, Books RoHS Compliant: NA N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
IRF240SMD |
N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))
|
SemeLAB SEME-LAB[Seme LAB] Air Cost Control
|
SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|